2010. 1. 6 1/3 semiconductor technical data KTC4380 epitaxial planar npn transistor revision no : 0 high voltage application features ? high voltage : v ceo =160v. ? large continuous collector current capability. ? recommended for led drive application. maximum rating (ta=25 ? ) dim a b d e g h k 4.70 max 2.50 0.20 1.70 max 0.45+0.15/-0.10 4.25 max 1.50 0.10 0.40 typ 1.75 max 0.75 min 0.5+0.10/-0.05 sot-89 c j g d a c k j f millimeters h b e f 123 f d + _ + _ electrical characteristics (ta=25 ? ) * : mounted on ceramic substrate (250mm 2 ?? 0.8t) note : h fe classification y(2) : 160~320 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =160v, i e =0 - - 1.0 a emitter cut-off current i ebo v eb =6v, i c =0 - - 1.0 a collector-emitter breakdown voltage v (br)ceo i c =10ma, i b =0 160 - - v dc current gain h fe (note) v ce =5v, i c =200ma 160 - 320 collector-emitter saturation voltage v ce(sat) i c =500ma, i b =50ma - - 1.5 v base-emitter voltage v be v ce =5v, i c =5ma 0.45 - 0.75 v transition frequency f t v ce =5v, i c =200ma - 100 - mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz - 15 - pf characteristic symbol rating unit collector-base voltage v cbo 160 v collector-emitter voltage v ceo 160 v emitter-base voltage v ebo 6 v collector current i c 1 a base current i b 0.5 a collector power dissipation p c 0.5 w p c * 1 junction temperature t j 150 ? storage temperature range t stg -55 ?- 150 ? d 2 type name lot no. h fe rank marking
2010. 1. 6 2/3 KTC4380 revision no : 0 i - v cbe be base-emitter voltage v (v) 0 0 collector current i (a) c 20 dc current gain h fe 500 1k 300 30 10 collector current i (ma) c h - i h - i c collector current i (ma) 10 30 100 1k fe dc current gain h 20 collector-emitter saturation ce(sat) 0.01 1k 30 10 5 collector current i (ma) c v - i v - i c collector current i (ma) 510 30 1k 0.01 ce(sat) collector-emitter saturation c collector current i (a) 0 0 collector-emitter voltage v (v) ce ce c i - v 4812 16 20 24 28 0.2 0.4 0.6 0.8 1.0 common emitter ta=25 c 15 10 6 4 3 2.5 2 1.5 1 i =0.5ma 0 b 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.2 0.4 0.6 0.8 1.0 common emitter v =5v ce ta= 100 c ta = 25 c ta = 0 c fe c 300 50 50 100 300 500 common emitter ta=25 c 10 5 v = 2v ce 100 50 50 100 300 fe common emitter v =10v ce ce v =5v ce(sat) c voltage v (v) 100 300 0.03 0.05 0.1 0.3 0.5 common emitter ta=25 c i /i =10 c b b c i /i =5 ce(sat) c voltage v (v) 100 300 0.03 0.05 0.1 0.3 0.5 common emitter i /i =10 c b ta=100 c ta=25 c ta=0 c c ta=100 c ta=25 c ta=0 c
2010. 1. 6 3/3 KTC4380 revision no : 0 collector output capacitance c (pf) 2 ob 200 100 3 1 collector-base voltage v (v) cb c - v f - i c collector current i (ma) 25 100 400 500 t transition frequency f (mhz) 10 tc 30 10 100 30 50 300 common emitter ta=25 c v =5v ce ce v =2v ob cb 510 3050 5 10 30 50 100 common emitter f=1mhz ta=25 c safe operating area ce collector-emitter voltage v (v) 0.3 1 3 300 3k c 1 collector current i (ma) 30 10 30 100 3 5 10 50 100 300 1k 500 single nonrepetitive pulse curves must be derated linearly with increase in temperature * i max(pulse) c c i max(conti- nuous) * 1ms * * 10ms 100ms * dc operation c collector power dissipation p (w) 0 0 ambient temperature ta ( c) c p - ta 20 40 60 80 100 120 140 160 0.2 0.4 0.6 0.8 1.0 1.2 mounted on ceramic substrate (250mm x 0.8t) ta=25 c 2 1 2 1 2
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